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Recent progress in parallel fabrication of individual single walled carbon nanotube devices

2014/05/03 by Muhammad R. Islam, Saiful I. Khondaker, Islam, Muhammad R. +1
Engineering · Materials Science · Physics and Astronomy · #Carbon Nanotubes in Composites #FOS: Physical sciences #Mechanical and Optical Resonators #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Nanowire Synthesis and Applications #cond-mat.mes-hall

paper · pdf · doi:10.48550/arxiv.1405.0551

arxiv created 2014/05/03 · openalex publication_date 2014/05/03 · arxiv updated 2014/05/06 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

Single walled carbon nanotubes (SWNTs) have attracted immense research interest because of their remarkable physical and electronic properties. In particular, electronic devices fabricated using individual SWNT have shown outstanding device performance surpassing those of Si. However, for the widespread application of SWNTs based electronic devices, parallel fabrication techniques along with Complementary Metal Oxide (CMOS) compatibility are required. One technique that has the potential to integrate SWNTs at the selected position of the circuit in a parallel fashion is AC dielectrophoresis (DEP). In this paper, we review recent progress in the parallel fabrication of SWNT-based devices using DEP. The review begins with a theoretical background for the DEP and then discusses various parameters affecting DEP assembly of SWNTs. We also review the electronic transport properties of the DEP assembled devices and show that high performance devices can be fabricated using DEP. The technique for fabricating all semiconducting field effect transistor using DEP is also reviewed. Finally, we discuss the challenges and opportunities for the DEP assembly of SWNTs.

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