2003/02/14 by L. E. Golub, E. L. Ivchenko, Golub, L. E. +1 · 1 citation
Engineering · Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.cond-mat/0302308
3 pages, 1 figure
arxiv created 2003/02/14 · openalex publication_date 2003/02/14 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Spin splitting of conduction electron states has been analyzed for all possible point symmetries of SiGe quantum well structures. A particular attention is paid to removal of spin degeneracy caused by the rotoinversion asymmetry of a (001) heterointerface between two diamond-lattice materials. Consequences of the spin splitting on the electron spin relaxation time is discussed.