2013/04/30 by K. Filintoglou, Filintoglou, K., N. Papadopoulos +17
Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1304.8040
arxiv created 2013/04/30 · arxiv updated 2013/05/01
The pressure evolution of the Raman spectrum of graphene grown by chemical vapour deposition on polycrystalline copper is investigated with the use of a polar and a non-polar pressure transmitting medium (PTM). The G and 2D Raman bands exhibit similar pressure slopes for both PTM irrespectively of any unintentional initial doping and/or strain of the samples. Our analysis suggests that any pressure-induced charge transfer effects are negligibly small to influence the pressure response of graphene. This is determined by the mechanical stress due to the pressure-induced substrate contraction and the transfer efficiency of the latter to the graphene layer, as well as the PTM-graphene interaction. For the non-polar PTM, a peculiar pressure behavior of graphene is observed in the PTM solidification regime, resembling that of free standing graphene.