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Raman Spectroscopy of Graphene under Uniaxial Stress: Phonon Softening and Determination of the Crystallographic Orientation

2008/12/11 by Mingyuan Huang, Hugen Yan, Huang, Mingyuan +9
Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.0812.2258

arxiv created 2008/12/11 · arxiv updated 2009/12/01

Abstract

We present a systematic study of the Raman spectra of optical phonons in graphene monolayers under tunable uniaxial tensile stress. Both the G and 2D bands exhibit significant red shifts. The G band splits into two distinct sub-bands (G+, G-) because of the strain-induced symmetry breaking. Raman scattering from the G+ and G- bands shows a distinctive polarization dependence that reflects the angle between the axis of the stress and the underlying graphene crystal axes. Polarized Raman spectroscopy therefore constitutes a purely optical method for the determination of the crystallographic orientation of graphene.

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