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Characterisation of the first wafer-scale prototype for the ALICE ITS3 upgrade: the monolithic stitched sensor (MOSS)

2025/10/13 by Abdelrahman, Omar, G. Aglieri Rinella, Rinella, Gianluca Aglieri +233 · 2 citations
Engineering · Physics and Astronomy · #CCD and CMOS Imaging Sensors #FOS: Physical sciences #Instrumentation and Detectors (physics.ins-det) #Particle Detector Development and Performance #Radiation Detection and Scintillator Technologies

paper · pdf · doi:10.48550/arxiv.2510.11463

openalex publication_date 2025/10/13 · openalex created_date 2025/10/15 · openalex updated_date 2026/07/28

Abstract

This paper presents the characterisation and testing of the first wafer-scale monolithic stitched sensor (MOSS) prototype developed for the ALICE ITS3 upgrade that is to be installed during the LHC Long Shutdown 3 (2026-2030). The MOSS chip design is driven by the truly cylindrical detector geometry that imposes that each layer is built out of two wafer-sized, bent silicon chips. The stitching technique is employed to fabricate sensors with dimensions of 1.4 × 25.9 cm, thinned to 50 μm. The chip architecture, in-pixel front-end, laboratory and in-beam characterisation, susceptibility to single-event effects, and series testing are discussed. The testing campaign validates the design of a wafer-scale stitched sensor and the performance of the pixel matrix to be within the ITS3 requirements. The MOSS chip demonstrates the feasibility of the ITS3 detector concept and provides insights for further optimisation and development.

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