The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate

1996/07/19 by E. Pehlke, Eckhard Pehlke, Pehlke, Eckhard +4
Engineering · Materials Science · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Chemical and Physical Properties of Materials #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor Quantum Structures and Devices #cond-mat.mtrl-sci #mtrl-th

paper · pdf · doi:10.48550/arxiv.mtrl-th/9607012

4 pages, 1 figure, to appear in "The Physics of Semiconductors"

arxiv created 1996/07/19 · openalex publication_date 1996/07/19 · arxiv updated 2016/09/07 · openalex created_date 2025/10/24 · openalex updated_date 2026/07/28

Abstract

The equilibrium shape of strained InAs quantum dots grown epitaxially on a GaAs(001) substrate is derived as a function of volume. InAs surface energies are calculated within density-functional theory, and a continuum approach is applied for the elastic relaxation energies.

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