1996/11/29 by E. Pehlke, N. Moll, Nikolaj Moll +5
Chemistry · Materials Science · Physics and Astronomy · #Advanced Physical and Chemical Molecular Interactions #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Quantum Dots Synthesis And Properties #Semiconductor Quantum Structures and Devices #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/9612004
10 pages, 4 figures. Submitted to Nuovo Cimento (November 27, 1996).
arxiv created 1996/11/29 · openalex publication_date 1996/11/29 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The formation of dislocation-free three-dimensional islands during the heteroepitaxial growth of lattice-mismatched materials has been observed experimentally for several material systems. The equilibrium shape of the islands is governed by the competition between the surface energy and the elastic relaxation energy of the islands as compared to the uniform strained film. As an exemplification we consider the experimentally intensively investigated growth of InAs quantum dots on a GaAs(001) substrate, deriving the equilibrium shape as a function of island volume. For this purpose InAs surface energies have been calculated within density-functional theory, and a continuum approach has been applied to compute the elastic relaxation energies.