2017/12/11 by Anveeksh Koneru, Koneru, Anveeksh, Terence Musho +1
Engineering · Physics and Astronomy · #Computational Physics (physics.comp-ph) #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor materials and devices #Surface and Thin Film Phenomena
paper · pdf · doi:10.48550/arxiv.1712.04074
openalex publication_date 2017/12/11 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The spin Seebeck effect has recently been demonstrated as a viable method of direct energy conversion that has potential to outperform energy conversion from the conventional Seebeck effect. In this study, a computational transport model is developed and validated that predicts the spin Seebeck voltage in spin-polarized materials using material parameter obtain from first principle ground state density functional calculations. The transport model developed is based on a 1D effective mass description coupled with a microscopic inverse spin Hall relationship. The model can predict both the spin current and voltage generated in a non-magnetic material placed on top of a ferromagnetic material in a transverse spin Seebeck configuration. The model is validated and verified with available experimental data of La:YIG. Future applications of this model include the high-throughput exploration of new spin-based thermoelectric materials.