2015/07/09 by R. Cuan, J. González‐Hernández, Cuan, R. +3
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.1507.02586
openalex publication_date 2015/07/09 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We studied the spin-dependent quantum transport properties using a simple modelling of a Datta-Das spin transistor. We refine previous results by accounting the propagation medium changes of opacity felt by itinerant electrons, when the gate-voltage is switched on and modelling them via the transversal energy levels mismatch. Monitoring the topological-dependent conductance, we are able to identify the device operating points. If the incoming electrons energy approaches the biased-induced barriers height, the spin-resolved conductance oscillations become significant. In a zero temperature picture, our computations of the spin-dependent conductance as function of the electric field at the region below the gate electrode suggest the feasibility of the modeled device. Although we demonstrate that phase time may not be spin-resolved, our simulation allows us to evaluate the time that takes an electron to experience a spin-flip process, resulting in an order of magnitude lower than typical values of the spin relaxation times.