Experimental detection of surface spin-polarized electron accumulation in topological insulators using scanning tunneling microscopy

2020/04/07 by S. Tyagi, Michael Dreyer, Tyagi, S. +15
Physics and Astronomy · #FOS: Physical sciences #Magnetic properties of thin films #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Topological Materials and Phenomena

paper · pdf · doi:10.48550/arxiv.2004.03563

openalex publication_date 2020/04/07 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Spin-momentum locking in the surface mode of topological insulators (TI) leads to the surface accumulation of spin-polarized electrons caused by bias current flows through TI samples. Here, we demonstrate that scanning tunneling microscopy can be used to sense this surface spin-polarized electron accumulation. We present experimental results of this sensing for Sn-doped Bi₂Se₃ samples by employing Fe-coated W tips as well as non-magnetic W tips. We observe a linear increase in the spin-accumulation as a function of bias current through TI samples.

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