Study Of Surface Spin-Polarized Electron Accumulation In Topological Insulators Using Scanning Tunneling Microscopy

2019/11/01 by Tyagi, S., Dreyer, M., Bowen, D. +6
#FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)

paper · doi:10.48550/arxiv.1911.00162

Abstract

The results of scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying bismuth selenide (Bi₂Se₃) samples are reported. Asymmetry in tunneling currents with respect to the change in the direction of bias currents through Bi₂Se₃ samples has been observed. It is argued that this asymmetry is the manifestation of surface spin-polarized electron accumulation caused by the ninety-degree electron spin-momentum locking in the topologically protected surface current mode. It is demonstrated that the manifestation of surface spin-polarized electron accumulation is enhanced by tin doping of Bi₂Se₃ samples. Furthermore, the appearance of spin-dependent density of states in current carrying Bi₂Se₃ samples has also been observed.

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