Electro-mechanically induced GHz rate optical frequency modulation in silicon

2012/07/26 by Siddharth Tallur, Tallur, Siddharth, Sunil A. Bhave +1
Engineering · Materials Science · Physics and Astronomy · #Mechanical and Optical Resonators #Photonic and Optical Devices #Silicon Nanostructures and Photoluminescence #physics.optics

paper · pdf · doi:10.48550/arxiv.1207.6376

arxiv created 2012/07/26 · arxiv updated 2012/07/27

Abstract

We present a monolithic silicon acousto-optic frequency modulator (AOFM) operating at 1.09GHz. Direct spectroscopy of the modulated laser power shows asymmetric sidebands which indicate coincident amplitude modulation and frequency modulation. Employing mechanical levers to enhance displacement of the optical resonator resulted in greater than 67X improvement in the opto-mechanical frequency modulation factor over earlier reported numbers for silicon nanobeams.

Citations

• Optoelectronic oscillator for photonic systems

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