2013/11/15 by M. Bomben, Alvise Bagolini, Bomben, M. +18
Engineering · Physics and Astronomy · #CCD and CMOS Imaging Sensors #FOS: Physical sciences #High Energy Physics - Experiment (hep-ex) #Instrumentation and Detectors (physics.ins-det) #Particle Detector Development and Performance #Radiation Detection and Scintillator Technologies #hep-ex #physics.ins-det
paper · pdf · doi:10.48550/arxiv.1311.3780
6 pages, 13 figures, to appear in the proceedings of the 2013 Nuclear Science Symposium and Medical Imaging Conference. arXiv admin note: text overlap with arXiv:1311.1628
arxiv created 2013/11/15 · openalex publication_date 2013/11/15 · arxiv updated 2013/11/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, a complete overview of the electrical characterization of several irradiated samples will be discussed. Some comments about detector modules being assembled will be made and eventually some plans will be outlined.