2002/10/18 by T. Lari, Lari, T.
Physics and Astronomy · #FOS: Physical sciences #High Energy Physics - Experiment (hep-ex) #Particle Detector Development and Performance #Particle physics theoretical and experimental studies #Radiation Detection and Scintillator Technologies #hep-ex
paper · pdf · doi:10.48550/arxiv.hep-ex/0210045
8 pages, 6 figures, Pixel2002 conference
arxiv created 2002/10/18 · openalex publication_date 2002/10/18 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Silicon pixel detectors produced according to the ATLAS Pixel Detector design were tested in a beam at CERN in the framework of the ATLAS collaboration. The detectors used n+/n sensors with oxygenated silicon substrates. The experimental behaviour of the detectors after irradiation to 1.1 10**15 neq/cm**2 and 600 kGy is discussed. At the sensor bias voltage of 600 V the depleted depth is measured to be 229 um, the mean collected charge is 20000 electrons, the detection efficiency is 98.2% and the spatial resolution is 9.6 um