2017/08/24 by P. N. Rao, Rao, P. N., Raj Kumar Gupta +11
Engineering · Materials Science · Physics and Astronomy · #Electron and X-Ray Spectroscopy Techniques #FOS: Physical sciences #Ion-surface interactions and analysis #Materials Science (cond-mat.mtrl-sci) #X-ray Spectroscopy and Fluorescence Analysis
paper · pdf · doi:10.48550/arxiv.1708.07378
openalex publication_date 2017/08/24 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Boron carbide thin films of different thicknesses deposited by ion beam sputtering were studied. The deposited films were characterized by grazing incidence hard x-ray reflectivity (GIXR), resonant soft x-ray reflectivity (RSXR), x-ray photo electron spectroscopy (XPS), resonant Rutherford backscattering spectrometry (RRBS), and time of flight secondary ion mass spectrometry (TOF-SIMS). An in-depth profile of the chemical elements constitute the films is reconstructed based on analysis of reflectivity curves measured in the vicinity of B K-edge. The composition of films is closely dependent on film thickness. Boron to Carbon (B/C) ratio reaches to ~4 as the thickness of deposited films increases. The B/C ratio estimated from RSXR measurements are in agreement with the RRBS measurements. TOF-SIMS data also suggested that decrease in boron content with decrease in film thickness. XPS measurements confirm the presence of little amount of B atoms on the surface of low thickness film.