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High-Q membrane resonators using ultra-high-stress crystalline TiN films

2025/09/03 by Matsuyama, Yuki, Shotaro Shirai, Ippei Nakamura +14
Engineering · Physics and Astronomy · #Acoustic Wave Resonator Technologies #FOS: Physical sciences #Force Microscopy Techniques and Applications #Materials Science (cond-mat.mtrl-sci) #Mechanical and Optical Resonators #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)

paper · doi:10.48550/arxiv.2509.02987

openalex publication_date 2025/09/03 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

High-quality-factor (Q) mechanical resonators are essential components for precise sensing and control of mechanical motion at a quantum level. While amorphous materials such as SiN have been widely used in high-Q mechanical resonators utilizing stress-induced dissipation dilution, crystalline materials have emerging potential to achieve higher quality factors by combining low intrinsic loss and high tensile stress. In this paper, we demonstrate high-Q membrane resonators using ultra-high-stress crystalline TiN. Our membrane resonator exhibits a tensile stress exceeding 2.3 GPa and a quality factor of Q = 8.0 × 106 at 2.2 K. By estimating the dilution factor, we infer that our TiN resonator has a intrinsic quality factor comparable to that of SiN membrane resonators. With its ultra-high stress and crystalline properties, our TiN films can serve as a powerful tool for opto- and electromechanical systems, offering highly dissipation-diluted mechanical resonators.

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