2015/02/09 by Sara Safa, Safa, Sara, Asghar Asgari +1
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor Quantum Structures and Devices #Semiconductor materials and interfaces
paper · pdf · doi:10.48550/arxiv.1502.02449
openalex publication_date 2015/02/09 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
The in-plane electron mobility has been calculated in InAs/GaSb type-II superlattices at low temperatures. The interface roughness scattering and ionized impurity scattering are investigated as the dominant scattering mechanisms in limiting the electron transport at low temperatures. For this purpose, the band structures and wave functions of electrons in such superlattices are calculated by solving the K.P Hamiltonian using the numerical Finite Difference method. The scattering rates have obtained for different temperatures and structural parameters. We show that the scattering rates are high in thin-layer superlattices and the mobility rises as the temperature increases in low-temperature regime.