2012/10/18 by A. Yu. Filatov, A. Filatov, A. E. Pogorelov +5
Engineering · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Non-Destructive Testing Techniques #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1210.5096
14 pages, 4 figures
arxiv created 2012/10/18 · openalex publication_date 2012/10/18 · arxiv updated 2012/10/19 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We study the electro-physical properties of the Fe/MgO/Fe magnetic tunnel junctions (MTJ). Sample structures are fabricated on top of glass-ceramic substrates by e-beam evaporation in a relatively low vacuum (~10-4 Torr). The influence of the first magnetic layer fabrication conditions on the degradation of the MTJ is explained by the interlayer diffusion. Various models of electro-physical processes in MTJ on polycrystalline substrates are discussed. The current-voltage (I-V) characteristics of the fabricated structures are found to exhibit the region with the negative differential resistance, similar to the one in tunneling diodes. We explain this phenomenon by the formation of excitons in the MgO layer modified by impurities. Obtained results will be useful in the development of MRAM devices containing MTJs and tunneling diodes.