2024/08/25 by Mykola E. Yelisieiev, Yelisieiev, Mykola, V. A. Kochelap +1
Engineering · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Integrated Circuits and Semiconductor Failure Analysis #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.2408.13811
openalex publication_date 2024/08/25 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We report the study of quasi-ballistic electron transport in short FETs subjected to magnetic field. Spatial distributions of electron concentrations, velocities, Hall currents and voltages in the short FET channels are determined. The basic properties of current-voltage characteristics of quasi-ballistic FETs in magnetic field are analyzed, among these the kink-like characteristics of the near-ballistic device. Peculiarities of magnetoresistance of such FETs are studied for low and high magnetic fields, and different current regimes. For nonlinear current regimes we revealed significantly larger magnetoresistance for the devices with higher ballisticity. Numerical estimates of studied effects are presented. We suggest, that the found results contribute to the physics of short FETs and can be used for developing nanoscale devices for particular applications.