Modeling of ion-implanted atoms diffusion during the epitaxial growth of the layer

2011/06/12 by О. И. Величко, O. I. Velichko, Velichko, O. I. +2
Engineering · Physics and Astronomy · #Advanced Surface Polishing Techniques #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Metal and Thin Film Mechanics #Silicon and Solar Cell Technologies #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1106.2313

3 pages, 2 figures

arxiv created 2011/06/12 · openalex publication_date 2011/06/12 · arxiv updated 2011/06/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The equation of impurity diffusion due to formation, migration, and dissolution of the pairs "impurity atom - intrinsic point defect" taking into account the nonuniform distributions of nonequilibrium point defects and drift of the pairs in the field of elastic stresses is presented in the coordinate system associated with the moving surface of the growing epitaxial layer. The analytical solution of this equation for the low fluence ion implantation has been obtained.

Related

• Set of equations for transient enhanced diffusion in shallow ion-implanted layers
• Analytical solution of diffusion equation for point defects
• Solution of the nonstationary diffusion equation for interstitial impurity atoms by the method of Green functions
• Simulation of point defect diffusion in structures with local elastic stresses
• Analytical solution of the equations describing interstitial migration of impurity atoms