2005/09/06 by Dan Csontos, Csontos, Dan, Sergio E. Ulloa +1
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/0509165
11 pages, 7 figures
arxiv created 2005/09/06 · openalex publication_date 2005/09/06 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We present a detailed microscopic study of quasi-ballistic transport in deep submicron semiconductor channels. In particular, we study the crossover between the diffusive and ballistic regimes of transport and identify signatures in the electrostatic response, electron density, and nonequilibrium electron distribution function that are due to ballistic and diffusive transport, respectively. Our theoretical and computational approach is based on the Boltzmann transport equation for a nondegenerate electron system, together with the Poisson equation, from which we obtain the nonequilibrium electron distribution in a self-consistent way.