2014/02/23 by Lianfeng Zhao, Zhao, Lianfeng, Zhen Tan +6
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and devices #Semiconductor materials and interfaces #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1402.5598
9 pages, 4 figures
arxiv created 2014/02/23 · openalex publication_date 2014/02/23 · arxiv updated 2014/02/25 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
GaSb p-channel MOSFETs with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si implanted source/drain are demonstrated. Thermal anneal conditions are optimized for the source/drain impurity activation. Temperature dependent electrical characteristics are investigated. Different electrical behaviors are observed in two different temperature regions and the mechanisms underneath are proposed. Off-state drain current is generation current dominated in the low temperature regions and is diffusion current dominated in the high temperature regions.