Scattering theory of the Johnson spin transistor

1999/06/30 by Linda S. Geux, Geux, Linda S., Arne Brataas +4
Engineering · Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #Surface and Thin Film Phenomena #cond-mat.mes-hall

paper · pdf · doi:10.48550/arxiv.cond-mat/9906440

To be published in Acta Physica Polonica

arxiv created 1999/06/30 · openalex publication_date 1999/06/30 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We discuss a simple, semiclassical scattering theory for spin-dependent transport in a many-terminal formulation, with special attention to the four terminal device of Johnson referred to as spin transistor

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