2021/11/23 by C D Ren, Chongdan Ren, L. X. Cui +12
Engineering · Materials Science · Mathematics · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Condensed matter physics #Current (fluid) #Electrical engineering #Engineering #FOS: Physical sciences #Flow (mathematics) #Geometry #Graphene #Graphene research and applications #Line (geometry) #Mathematics #Mechanics #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Physics #Quantum #Quantum Gases (cond-mat.quant-gas) #Quantum and electron transport phenomena #Quantum mechanics #Quantum tunnelling #Topology (electrical circuits) #cond-mat.mes-hall #cond-mat.quant-gas
paper · pdf · doi:10.48550/arxiv.2111.11686
published in arXiv (Cornell University) (Cornell University) · 10 pages, 3 figures
arxiv created 2021/11/23 · openalex publication_date 2021/11/23 · arxiv updated 2021/11/24 · openalex created_date 2021/12/06 · openalex updated_date 2026/07/28
Based on the Keldysh Green's function method, we report an unconventional two-parameter quantum pumping in graphene with a line defect. It is found that different from the conventional sinusoidal relation, the pumped current in this device is cosinusoid dependence on the phase difference between the two pumping potentials, which adopts its positive/nagative maximum value at while tends to zero at . This phenomenon is related to the peculiar valley tunneling characteristics across the line defects and the exchange of valley indices on both sides of the line defect. Moreover, the pumped currents from the two valleys will flow in opposite directions along the line defect, indicating that the controllable valley current can be pumped out in the line defect without the application of strain field in graphene.