2016/01/08 by Takeham Tsutsumi, Giovanni Alfieri, Tsutsumi, T. +5
Physics and Astronomy · #FOS: Physical sciences #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Optics (physics.optics) #Photorefractive and Nonlinear Optics #Semiconductor Quantum Structures and Devices
paper · pdf · doi:10.48550/arxiv.1601.01976
openalex publication_date 2016/01/08 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
In this letter, we aim to elucidate the physical mechanism of the so called optical memory effect and blinking phenomenon observed in InGaN single quantum wells (SQW). We have found that the optical response of both memory effect and blinking phenomenon, is affected by different excitation wavelengths and by the change of gas adsorption on the crystal surface. A model that reproduce dynamics of the coverage of absorbed gas molecules on the sample surface is given and compared with experimental data with evident match.