Photoluminescence from surface GaN/AlGaN quantum wells: Effect of the surface states

2009/05/12 by Yuri D. Glinka, Glinka, Y. D., Tigran V. Shahbazyan +15
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci)

paper · pdf · doi:10.48550/arxiv.0905.1972

openalex publication_date 2009/05/12 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We report on photoluminescence (PL) measurements at 85 K for GaN/AlGaN surface quantum wells (SQW's) with a width in the range of 1.51-2.9 nm. The PL spectra show a redshift with decreasing SQW width, in contrast to the blueshift normally observed for conventional GaN QW's of the same width. The effect is attributed to a strong coupling of SQW confined exciton states with surface acceptors. The PL hence originates from the recombination of surface-acceptor-bound excitons. Two types of acceptors were identified.

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