Nb₂SiTe₄: A Stable Narrow-Gap Two-Dimensional Material with Ambipolar Transport and Mid-Infrared Response

2019/09/09 by Zhao, Mingxing, Xia, Wei, Wang, Yang +5 · 1 citation
#Applied Physics (physics.app-ph) #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)

paper · doi:10.48550/arxiv.1909.03635

Abstract

Two-dimensional (2D) materials with narrow band gaps (~0.3 eV) are of great importance for realizing ambipolar transistors and mid-infrared (MIR) detection. However, most of the 2D materials studied so far have band gaps that are too large. A few of them with suitable band gaps are not stable under ambient conditions. In this study, the layered Nb₂SiTe₄ is shown to be a stable 2D material with a band gap of 0.39 eV. Field-effect transistors based on few-layer Nb₂SiTe₄ show ambipolar transport with similar magnitude of electron and hole current and high charge-carrier mobility of ~ 100 cm²V^-1s^-1 at room temperature. Optoelectronic measurements of the devices show clear response to MIR wavelength of 3.1 \mathrmμm with a high responsivity of ~ 0.66 AW^-1. These results establish Nb₂SiTe₄ as a good candidate for ambipolar devices and MIR detection.

Cited by

• Sensitive infrared surface photovoltage in quasi-equilibrium in a layered semiconductor at low-intensity low-temperature condition

Related

• 2D Nb-doped MoS₂: Tuning the Exciton Transitions and Application to p-type FETs
• 2D Janus Niobium Oxydihalide NbOXY: Multifunctional High-Mobility Piezoelectric Semiconductor for Electronics, Photonics and Sustainable Energy Applications
• Sensitive infrared surface photovoltage in quasi-equilibrium in a layered semiconductor at low-intensity low-temperature condition
• Ultrahigh-performance superlattice mid-infrared nBn photodetectors at high operating temperatures
• n B n detector, an infrared detector with reduced dark current and higher operating temperature