n B n detector, an infrared detector with reduced dark current and higher operating temperature

2006/10/09 by S. Maimon, G. W. Wicks · 1 voice · 3 citations
Chemistry · Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Semiconductor Quantum Structures and Devices #Spectroscopy and Laser Applications

paper · doi:10.1063/1.2360235

openalex publication_date 2006/10/09 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/29

Abstract

This letter presents a type of infrared detector named the nBn detector. The nBn design essentially eliminates Shockley-Read-Hall generation currents. The result is greatly reduced dark current and noise, compared to other midwave infrared detectors, such as p-n photodiodes. This enables the nBn to operate at background-limited infrared photodetection conditions at significantly higher temperatures than conventional midwave infrared detectors and have greater detectivity near room temperature. The nBn is demonstrated in InAs and InAsSb materials, exhibiting cutoff wavelengths of 3.4 and 4.2μm, respectively.

Cited by

• Sensitivity assessment of 4.8 μm cutoff GaInAsSbBi nBn photodetectors for mid-wave infrared sensing applications
• Scalable fabrication of mid-wavelength and long-wavelength infrared photodetectors based on narrow bandgap semiconductors: challenges and opportunities
• Al0.3InAsSb/Al0.7InAsSb Digital Alloy nBn Photodetectors

Discussions

• ⚛️ 🧪 This barrier design greatly improved the performance of III-V semiconductor infrared detectors and was a major advancement for the field: doi.org/10.1063/1.23... #semiconductor [bsky, 7 points, 0 comments]

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