Rubidium and cesium ion-induced electron and ion signals for scanning ion microscopy applications

2024/03/08 by Li, Y., Xu, S., Loeber, T. H. +1
#FOS: Physical sciences #Instrumentation and Detectors (physics.ins-det)

paper · doi:10.48550/arxiv.2403.05460

Abstract

Scanning ion microscopy applications of novel focused ion beam (FIB) systems based on ultracold rubidium (Rb) and cesium (Cs) atoms were investigated via ion-induced electron and ion yields. Results measured on the Rb⁺ and Cs⁺ FIB systems were compared with results from commercially available gallium (Ga⁺) systems to verify the merits of applying Rb⁺ and Cs⁺ for imaging. The comparison shows that Rb⁺ and Cs⁺ have higher secondary electron (SE) yields on a variety of pure element targets than Ga⁺, which implies a higher signal-to-noise ratio can be achieved for the same dose in SE imaging using Rb⁺/Cs⁺ than Ga⁺. In addition, analysis of the ion-induced ion signals reveals that secondary ions dominate Cs⁺ induced ion signals while the Rb⁺/Ga⁺ induced signals contain more backscattered ions.

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