Identifying diverging-effective mass in MOSFET and ³He systems

2022/05/04 by Kim, Hyun-Tak
#FOS: Physical sciences #Strongly Correlated Electrons (cond-mat.str-el)

paper · doi:10.48550/arxiv.2205.01916

Abstract

Emerging devices such as a neuromorphic device and a qubit can use the Mott transition phenomenon, but in particular, the diverging mechanism of the phenomenon remains to be clarified. The diverging-effective mass near Mott insulators was measured in strongly correlated Mott systems such as a fermion ³He and a Si metal-oxide-semiconductor-field-effect transistor, and is closely fitted by the effective mass obtained by the extension of the Brinkman-Rice(BR) picture, m^*/m=1/[1-(U/U_c)²]=1/(1-κ²_BRρ⁴) when κ²_BR≈1(≠1), where 0

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