2000/12/05 by K. Eng, Eng, K., X. G. Feng +6
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Disordered Systems and Neural Networks (cond-mat.dis-nn) #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Strongly Correlated Electrons (cond-mat.str-el) #cond-mat.dis-nn #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.48550/arxiv.cond-mat/0012063
2 pages, 3 figures; to be publ. in the Proceedings of the 25th Int. Conf. on the Physics of Semiconductors (Osaka, Sept. 2000)
arxiv created 2000/12/05 · openalex publication_date 2000/12/05 · arxiv updated 2009/11/30 · openalex created_date 2022/11/28 · openalex updated_date 2026/07/28
Magnetoconductance (MC) in a parallel magnetic field B has been measured in a two-dimensional electron system in Si, in the regime where the conductivity decreases as σ(ns,T,B=0)=σ(ns,T=0) + A(ns)T2 (ns -- carrier density) to a non-zero value as temperature T->0. Very near the B=0 metal-insulator transition, there is a large initial drop in σwith increasing B, followed by a much weaker σ(B). At higher ns, the initial drop of MC is less pronounced.