Anomalous Subthreshold Behaviors in Negative Capacitance Transistors

2020/06/04 by Yu-Hung Liao, Daewoong Kwon, Liao, Yu-Hung +13
Engineering · #Advanced Memory and Neural Computing #Applied Physics (physics.app-ph) #FOS: Physical sciences #Ferroelectric and Negative Capacitance Devices #Semiconductor materials and devices

paper · pdf · doi:10.48550/arxiv.2006.02594

openalex publication_date 2020/06/04 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Recent measurements on ultra-thin body Negative Capacitance Field Effect Transistors have shown subthreshold behaviors that are not expected in a classical MOSFET. Specifically, subthreshold swing was found to decrease with increased gate bias in the subthreshold region for devices measured over multiple gate lengths down to 30 nm. In addition, improvement in the subthreshold swing relative to control devices showed a non-monotonic dependence on the gate length. In this paper, using a Landau-Khanatnikov ferroelectric gate stack model calibrated with measured Capacitance-Voltage, we show that both these anomalous behaviors can be quantitatively reproduced with TCAD simulations.

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