2007/06/05 by Zahid Hasan Mahmood, Amish Shah, Mahmood, Zahid Hasan +12
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Other Condensed Matter (cond-mat.other) #Semiconductor materials and devices #cond-mat.mtrl-sci #cond-mat.other
paper · pdf · doi:10.48550/arxiv.0706.0583
10 pages, 3 figures
arxiv created 2007/06/05 · openalex publication_date 2007/06/05 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Band discontinuities at the InN-GaN heterointerface are experimentally determined from internal photoemission spectroscopy measurements on n+ InN on GaN epilayers. The photocurrent shows two threshold energies, one at 1.624 eV and the other at 2.527 eV. From these we obtain the valence band offset 0.85 eV and the conduction band offset 1.82 eV.