2017/06/30 by Giriraj Jnawali, Hyungwoo Lee, Jnawali, Giriraj +25
Engineering · Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Ferroelectric and Negative Capacitance Devices #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor materials and devices #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.1706.10254
27 pages, 10 figures
openalex publication_date 2017/06/30 · arxiv created 2018/04/04 · arxiv updated 2018/04/06 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/01
The integration of graphene with complex-oxide heterostructures such as LaAlO3/SrTiO3 offers the opportunity to combine the multifunctional properties of an oxide interface with the electronic properties of graphene. The ability to control interface conduction through graphene and understanding how it affects the intrinsic properties of an oxide interface are critical to the technological development of novel multifunctional devices. Here we demonstrate several device archetypes in which electron transport at an oxide interface is modulated using a patterned graphene top gate. Nanoscale devices are fabricated at the oxide interface by conductive atomic force microscope (c-AFM) lithography, and transport measurements are performed as a function of the graphene gate voltage. Experiments are performed with devices written adjacent to or directly underneath the graphene gate. Unique capabilities of this approach include the ability to create highly flexible device configurations, the ability to modulate carrier density at the oxide interface, and the ability to control electron transport up to the single-electron-tunneling regime, while maintaining intrinsic transport properties of the oxide interface. Our results facilitate the design of a variety of nanoscale devices that combine unique transport properties of these two intimately coupled two-dimensional electron systems.