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Enhancing the Figure of Merit in Te-doped FeSb2 through nanostructuring

2013/03/15 by Mani Pokharel, M. Pokharel, Pokharel, M. +12
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Heusler alloys: electronic and magnetic properties #Iron-based superconductors research #Magnetic and transport properties of perovskites and related materials #Materials Science (cond-mat.mtrl-sci) #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1303.3869

14 pages, 6 figures

arxiv created 2013/03/15 · openalex publication_date 2013/03/15 · arxiv updated 2013/03/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We study the thermoelectric properties of Te-doped FeSb2 nanostructured samples. Four samples of stoichiometry FeSb1.84Te0.16 were prepared by a hot press method at temperatures of 200, 400, 500, and 600 oC. Te-doping enhances the dimensionless figure of merit (ZT) on FeSb2 via two mechanisms. First, a semiconductor to metal transition is induced, which enhances the value of the power factor at low-temperatures. Second, the thermal conductivity, which was already reduced in nanostructured FeSb2 samples, is further reduced by increased point defect scattering through the n type substitution of Sb site by Te atom. The combined effect results in a ZT = 0.022 at 100 K, an increase of 62% over the ZT value for the optimized Te-doped single crystal sample. Hall coefficient and electrical resistivity measurements reveal a decreased mobility and increased concentration of the carriers in the doped sample.

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