2012/05/11 by Johan Pohl, Pohl, Johan, Thomas Unold +3
Engineering · Materials Science · #Chalcogenide Semiconductor Thin Films #Chemical and Physical Properties of Materials #Copper-based nanomaterials and applications #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Quantum Dots Synthesis And Properties
paper · pdf · doi:10.48550/arxiv.1205.2556
openalex publication_date 2012/05/11 · openalex created_date 2022/10/02 · openalex updated_date 2026/07/28
Electronic structure calculations within screened-exchange hybrid density\nfunctional theory show that Cu(In,Ga) antisites in both CuInSe2 and CuGaSe2 are\nlocalized hole traps, which can be attributed to the experimentally observed N2\nlevel. In contrast, GaCu antisites and their defect complexes with copper\nvacancies exhibit an electron trap level, which can limit the open-circuit\nvoltage and efficiency in Ga-rich Cu(In,Ga)Se2 alloys. Low-temperature\nphotoluminescence measurements in CuGaSe2 thin-film solar cells show a\nfree-to-bound transition at an energy of 1.48 eV, in very good agreement with\nthe calculated transition energy for the GaCu antisite. Since the intrinsic DX\ncenter does not exhibit a pinning level within the band gap of CuInSe2,\nmetastable DX behaviour can only be expected for GaCu antisites.\n