Black Phosphorus p-MOSFETs with High Transconductance and Nearly Ideal Subthreshold Slope

2014/09/30 by Nazila Haratipour, Haratipour, Nazila, Matthew C. Robbins +3
Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #cond-mat.mes-hall

paper · pdf · doi:10.48550/arxiv.1409.8395

arxiv created 2014/09/30 · arxiv updated 2014/10/01

Abstract

We report record performance for black phosphorus p-MOSFETs. The devices have locally patterned back gates and 20-nm-thick HfO2 gate dielectrics. Devices with effective gate length, Leff = 1.0 um display extrinsic transconductance, gm, of 101 uS/um at a drain-to-source bias voltage, Vds = -3 V. Temperature-dependent analysis also shows that the subthreshold slope, SS, is nearly ideal, with a minimum value of SS = 66 mV/decade at room temperature and Vds = -0.1 V. Furthermore, devices with 7-nm HfO2 dielectrics and Leff = 0.3 um displayed gm as high as 204 uS/um at Vds = -1.5 V.

Related

• Black phosphorus field-effect transistors
• High Electric Field Carrier Transport and Power Dissipation in Multilayer Black Phosphorus Field Effect Transistor with Dielectric Engineering
• Memory effects in black phosphorus field effect transistors
• Performance Analysis of uniaxially strained Monolayer Black Phosphorus and Blue Phosphorus n-MOSFET and p-MOSFET
• Engineering Schottky Barrier in Black Phosphorus field effect devices for spintronic applications