2021/10/15 by Alessandro Grillo, A. A. Grillo, Aniello Pelella +14
Computer Science · Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #Advanced Memory and Neural Computing #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Neural Networks and Reservoir Computing #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.2110.08148
arxiv created 2021/10/15 · openalex publication_date 2021/10/15 · arxiv updated 2021/10/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer characteristic, due to intrinsic defects, can be exploited to realize non-volatile memories. We demonstrate that gate voltage pulses allow to trap and store charge inside the defect states, which enable memory devices with endurance over 200 cycles and retention longer than 30 minutes. We show that the use of a protective poly (methyl methacrylate) layer, positioned on top of the black phosphorus channel, does not affect the electrical properties of the device but avoids the degradation caused by the exposure to air.