Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)

2025/03/07 by Yuhua Tsai, Yusuke Hashimoto, ZeXu Sun +9
#Ga2O3 #κ-Ga2O3

paper · doi:10.48505/nims.4479

Abstract

NANO LETTERS. 24 [13] (2024)

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