2001/12/12 by I. Gomez, I. Gómez, E. Díez +9
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Condensed matter physics #Conductance #Disordered Systems and Neural Networks (cond-mat.dis-nn) #Electron #FOS: Physical sciences #Geometry #Heterojunction #Materials science #Optics #Physics #Quantum and electron transport phenomena #Quantum mechanics #Scattering #Semiconductor Quantum Structures and Devices #Surface finish #Symmetry (geometry) #cond-mat.dis-nn
paper · pdf · doi:10.48550/arxiv.cond-mat/0112216
19 pages, 8 figures
arxiv created 2001/12/12 · openalex publication_date 2001/12/12 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We present a novel model to calculate vertical transport properties such as conductance and current in unintentionally disordered double barrier GaAs-AlxGa1-xAs heterostructures. The source of disorder comes from interface roughness at the heterojunctions (lateral disorder) as well as spatial inhomogeneities of the Al mole fraction in the barriers (compositional disorder). Both lateral and compositional disorder break translational symmetry along the lateral direction and therefore electrons can be scattered off the growth direction. The model correctly describe channel mixing due to these elastic scattering events. In particular, for realistic degree of disorder, we have found that the effects of compositional disorder on transport properties are negligible as compared to the effects due to lateral disorder.