2008/09/22 by T. Korn, Tobias Korn, R. Schulz +18
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Other Condensed Matter (cond-mat.other) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #ZnO doping and properties #cond-mat.mtrl-sci #cond-mat.other
paper · pdf · doi:10.48550/arxiv.0809.3654
4 pages, 4 figures
openalex publication_date 2008/09/22 · arxiv created 2008/11/12 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Semiconductor structures using ferromagnetic semiconductors as spin injectors are promising systems for future spintronic devices. Here, we present combined photoluminescence (PL) and time-resolved magneto-optical experiments of a nominally nonmagnetic quantum well(QW) separated by a thin barrier from a ferromagnetic Ga(Mn)As layer. Due to the partial quenching of the PL, we conclude that there is a significant Mn backdiffusion into the QW. Moreover, from the time-resolved measurements, we infer that the Mn leads to n-type doping within the QW, and, in addition, strongly increases the electron spin dephasing time.