Gate-tunable memristors from monolayer MoS2

2018/02/21 by Vinod K. Sangwan, Hong-Sub Lee, Hong‐Sub Lee +4
Computer Science · Engineering · Physics and Astronomy · #Advanced Memory and Neural Computing #Applied Physics (physics.app-ph) #FOS: Physical sciences #Ferroelectric and Negative Capacitance Devices #Machine Learning and ELM #Materials Science (cond-mat.mtrl-sci) #cond-mat.mtrl-sci #physics.app-ph

paper · pdf · doi:10.48550/arxiv.1802.07785

arxiv created 2018/02/21 · openalex publication_date 2018/02/21 · arxiv updated 2018/03/02 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We report here gate-tunable memristors based on monolayer MoS2 grown by chemical vapor deposition (CVD). These memristors are fabricated in a field-effect geometry with the channel consisting of polycrystalline MoS2 films with grain sizes of 3-5 um. The device characteristics show switching ratios up to 500, with the resistance in individual states being continuously gate-tunable by over three orders of magnitude. The resistive switching results from dynamically varying threshold voltage and Schottky barrier heights, whose underlying physical mechanism appears to be vacancy migration and/or charge trapping. Top-gated devices achieve reversible tuning of the threshold voltage, with potential utility in non-volatile memory or neuromorphic architectures.

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