2015/05/21 by Alejandro Schulman, Leandro F. Lanosa, Schulman, Alejandro +4
Engineering · Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Semiconductor materials and devices #Semiconductor materials and interfaces #Strongly Correlated Electrons (cond-mat.str-el) #Superconductivity (cond-mat.supr-con) #cond-mat.str-el #cond-mat.supr-con
paper · pdf · doi:10.48550/arxiv.1505.05813
16 pages, 5 figures
openalex publication_date 2015/05/21 · arxiv created 2015/07/28 · arxiv updated 2015/07/29 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Current-voltage (IV) characteristics and the temperature dependence of the contact resistance [R(T)] of Au / YBa2Cu3O7-δ (optimally doped YBCO) interfaces have been studied at different resistance states. This states were produced by resistive switching after accumulating cyclic electrical pulses of increasing number and voltage amplitude. The IV characteristics and the R(T) dependence of the different states are consistent with a Poole-Frenkel (P-F) emission mechanism with trapping-energy levels Et in the 0.06-0.11 eV range. Et remains constant up to a number-of-pulses-dependent critical voltage and increases linearly with further increasing the voltage amplitude of the pulses. The observation of a P-F mechanism reveals the existence of an oxygen-depleted layer of YBCO near the interface. A simple electrical transport scenario is discussed, where the degree of disorder, the trap energy level and the temperature range determine an electrical conduction dominated by non-linear effects, or by a P-F emission or by a Variable-Range Hopping regime.