2016/03/15 by R-Ribeiro Andrade, Andrade, R-Ribeiro, Douglas R. Miquita +17
Engineering · Physics and Astronomy · #FOS: Physical sciences #Integrated Circuits and Semiconductor Failure Analysis #Ion-surface interactions and analysis #Materials Science (cond-mat.mtrl-sci) #Semiconductor Quantum Structures and Devices #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1603.04758
14 pages, 8 figures
arxiv created 2016/03/15 · openalex publication_date 2016/03/15 · arxiv updated 2016/03/16 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
This work describes morphological and crystalline properties of the InAs islands grown on templates created by focused ion beam (FIB) on indium phosphide (InP) substrates. Regular arrangements of shallow holes are created on the InP (001) surfaces, acting as preferential nucleation sites for InAs islands grown by Metal-Organic Vapor Phase Epitaxy. Ion doses ranging from 1015 to 1016 Ga+/cm2 were used and islands were grown for two sub-monolayer coverages. We observe the formation of clusters in the inner surfaces of the FIB produced cavities and show that for low doses templates the nanostructures are mainly coherent while templates created with large ion doses lead to the growth of incoherent islands with larger island density. The modified island growth is described by a simple model based on the surface potential and the net adatom flow to the cavities. We observe that obtained morphologies result from a competition between coarsening and coalescence mechanisms.