2021/10/15 by Laferrière, Patrick, Yeung, Edith, Miron, Isabelle +7 · 4 citations
#FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Optics (physics.optics) #Quantum Physics (quant-ph)
paper · doi:10.48550/arxiv.2110.08366
We report on a platform for the production of single photon devices with a fabrication yield of 100%. The sources are based on InAsP quantum dots embedded within position-controlled bottom-up InP nanowires. Using optimized growth conditions, we produce large arrays of structures having highly uniform geometries. Collection efficiencies are as high as 83% and multiphoton emission probabilities as low as 0.6% with the distribution away from optimal values associated with the excitation of other charge complexes and re-excitation processes, respectively, inherent to the above-band excitation employed. Importantly, emission peak lineshapes have Lorentzian profiles indicating that linewidths are not limited by inhomogeneous broadening but rather pure dephasing, likely elastic carrier-phonon scattering due to a high phonon occupation. This work establishes nanowire-based devices as a viable route for the scalable fabrication of efficient single photon sources and provides a valuable resource for hybrid on-chip platforms currently being developed.