Parametric Analysis of First High-Gain Vertical Fe-doped Ultrafast Ga2O3 Photoconductive Semiconductor Switch

2025/08/06 by Karpourazar, N., Mazumder, S. K., Jangir, V. +3
#Applied Physics (physics.app-ph) #FOS: Physical sciences

paper · doi:10.48550/arxiv.2508.04911

Abstract

We investigate, as part of a Lawrence-Livermore-National-Laboratory (LLNL) sponsored-research work initiated in February of 2021, the parametric performance analysis of ultra-wide bandgap (UWBG) Fe-doped Ga2O3 photoconductive semiconductor switch (FG-PCSS) with embedded electrode. The detailed SILVACO based simulation of the FG-PCSS uses experimentally obtained lifetime, absorption coefficient, and mobility data. The key analysis results, demonstrated first to the sponsor LLNL in 2022, focus on the performance of the FG-PCSS under relatively high electric field and optical-excitation energy with specific regard to current gain, quantum efficiency, on-state resistance, and impact of beam position. The parametric analysis indicates that a high-gain operation yielding a low-cost laser beam for the FG-PCSS is possible.

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