2000/09/22 by P. König, U. Zeitler, König, P. +7
Physics and Astronomy · #FOS: Physical sciences #Magnetic properties of thin films #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.cond-mat/0009349
2 pages, 3 figures; 25th International Conference on the Physics of Semiconductors, Osaka, Japan, September 17-22, 2000
arxiv created 2000/09/22 · openalex publication_date 2000/09/22 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We have performed temperature dependent tunneling experiments through a single impurity in an asymmetric vertical double barrier tunneling structure. In particular in the charging direction we observe at zero magnetic field a clear shift in the onset voltage of the resonant tunneling current through the impurity. With a magnetic field applied the shift starts to disappear. The experimental observations are explained in terms of resonant tunneling through a spin degenerate impurity level.