Negative differential resistance in scanning tunneling microscopy: simulations on C₆₀-based molecular overlayers

2011/01/19 by Frederico D. Novaes, Novaes, Frederico D., Manuel Cobián +9
Engineering · Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Force Microscopy Techniques and Applications #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Molecular Junctions and Nanostructures

paper · pdf · doi:10.48550/arxiv.1101.3714

openalex publication_date 2011/01/19 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We determine the conditions in which negative differential resistance (NDR) appears in the C₆₀-based molecular device of [Phys. Rev. Lett. \bf 100, 036807 (2008)] by means of ab-initio electron-transport simulations. Our calculations grant access to bias-dependent intrinsic properties of the molecular device, such as electronic levels and their partial widths. We show that these quantities depend on the molecule-molecule and molecule-electrode interactions of the device. Hence, NDR can be tuned by modifying the bias behavior of levels and widths using both types of interactions.

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