2025/03/11 by Maike Gremmel, Gremmel, Maike, Chandrashekhar Savant +9 · 1 citation
Engineering · Materials Science · #Acoustic Wave Resonator Technologies #Advanced ceramic materials synthesis #FOS: Physical sciences #Ferroelectric and Piezoelectric Materials #Materials Science (cond-mat.mtrl-sci)
paper · pdf · doi:10.48550/arxiv.2503.08399
openalex publication_date 2025/03/11 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
This study explores the influence of boron incorporation on the structural and electrical properties of ferroelectric Aluminum Scandium Nitride (Al1-xScxN ) thin films, focusing on leakage currents, wake-up effects, and imprint behavior. Al1-xScxN films were incorporated with varying boron concentrations and analyzed under different deposition conditions to determine their structural integrity and ferroelectric performance. Key findings include a reduction in leakage currents, non-trivial alterations in bandgap energy as well as an increasing coercive fields with increasing boron content. Films with 6-13 at.% boron exhibited N-polar growth, while those with 16 at.% boron showed mixed polarity after deposition, which affected their ferroelectric response during the initial switching cycles - as did the addition of boron itself compared to pure Al1-xScxN . With increasing boron content, wake-up became gradually more pronounced and was strongest for pure Al1-xBxN .