Leakage Suppression Across Temperature in Al1-xScxN Thin Film Ferroelectric Capacitors through Boron Incorporation

2025/05/02 by Yousefian, Pedram, Tong, Xiaolei, Tan, Jonathan +3 · 1 citation
#Applied Physics (physics.app-ph) #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci)

paper · doi:10.48550/arxiv.2505.01612

Abstract

This paper presents high-temperature ferroelectric characterization of 40~nm Al_1-x-yB_xSc_yN (AlBScN) thin film capacitors grown by co-sputtering Al_0.89B_0.11 and Sc targets onto Pt(111)/Ti(002)/Si(100) substrates. Structural analysis confirmed a c-axis-oriented wurtzite structure with a low surface roughness of 1.37~nm. Ferroelectric switching, characterized by positive-up-negative-down (PUND) measurements up to 600~^∘C, exhibited a linear decrease in coercive fields from 6.2~MV/cm at room temperature to 4.2~MV/cm at 600~^∘C, while remanent polarization remained stable with temperature. Direct current I-V measurements highlight a significant suppression of leakage currents, over two orders of magnitude lower compared to AlScN capacitors fabricated under similar conditions. These results position AlBScN thin films as strong candidates for ferroelectric applications in extreme environments.

Cited by

• Low-Field Ferroelectricity in 10 nm AlBScN Thin Films

Related

• Low-Field Ferroelectricity in 10 nm AlBScN Thin Films
• The effect of boron incorporation on leakage and wake-up in ferroelectric Al_1-xSc_xN
• Coercive Field Reduction in Ultra-thin Al1-XScXN via Interfacial Engineering with a Scandium Electrode
• Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films
• Unique Ferroelectric Fatigue Behavior and Exceptional High Temperature Retention in Al0.93B0.07N Films